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Handbook for III-V High Electron Mobility Transistor Technologies 1st edition
Handbook for III-V High Electron Mobility Transistor Technologies 1st edition
The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
430 pages
Media | Books Paperback Book (Book with soft cover and glued back) |
Released | December 18, 2020 |
ISBN13 | 9780367729240 |
Publishers | Taylor & Francis Ltd |
Pages | 444 |
Dimensions | 775 g |
Language | English |
Editor | Ajayan, J. |
Editor | Nirmal, D. |