Nanoscaled Semiconductor-on-Insulator Structures and Devices - NATO Science for Peace and Security Series B: Physics and Biophysics 2nd edition

Marc Notes: Includes bibliographical references and author index. Table of Contents: Introduction.- Nanoscaled SOI Material and Device Technologies.- Status and Trends in SOI nanodevices; F. Balestra.- Non-planar devices for nanoscale CMOS; M. C. Lemme et al.- High-k dielectric stacks for nanoscaled SOI devices; S. Hall et al.- Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer; V. Popov et al.- Fluorine Vacancy Engineering: A viable solution for dopant diffusion suppression in SOI substrates; H. A. W. El Mubarek, P. Ashburn.- Suspended Silicon-On-Insulator nanowires for the fabrication of quadruple gate MOSFETs; V. Passi et al.- Physics of Novel Nanoscaled SemOI Devices.- Integration of silicon Single-Electron Transistors operating at room temperature; T. Hiramoto.- SiGe nanodots in electro-optical SOI devices; A. V. Dvurechenskii et al.- Nanowire quantum effects in trigate SOI MOSFETs; J.-P. Colinge.- Semiconductor nanostructures and devices; J. Knoch, H. Luth.- MugFET CMOS process with midgap gate material; W. Xiong et al.- Doping fluctuation effects in multiple-gate SOI MOSFETs; C. A. Colinge et al.- SiGeC HBTs: impact of C on device performance; I. Z. Mitrovic et al.- Reliability and Characterization of Nanoscaled SOI Devices.- Noise research of nanoscaled SOI devices; N. Lukyanchikova.- Electrical characterization and special properties of FINFET structures; T. Rudenko et al.- Substrate effect on the output conductance frequency response of SOI MOSFETs; V. Kilchytska et al.- Investigation of compressive strain effects induced by STI and ESL; S. Zaouia et al.- Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology; A. Nazarov et al.- Theory and Modeling of Nanoscaled Devices.- Variability in nanoscale UTB SOI devices and its impact on circuits and systems; A. Asenov, K. Samsudin.- Electron transport in Silicon-On-Insulator nanodevices; F. Gamiz et al.- All quantum simulation of ultrathin SOIMOSFETs; A. Orlikovsky et al.- Resonant tunneling devices on SOI basis; B. Majkusiak.- Mobility modeling in SOI FETs for different substrate orientations and strain conditions; V. Sverdlov et al.- Three-dimensional (3-D) analytical modeling of the threshold voltage, DIBL and subthreshold swing of cylindrical GATE All Around MOSFETs; H. A. El Hamid et al. Authors Index."Publisher Marketing: The fascinating pages of this book detail many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node. A further key issue and potential show stopper' for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects.