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Research on the Radiation Effects and Compact Model of SiGe HBT 1st ed. 2018 edition
Sun
Research on the Radiation Effects and Compact Model of SiGe HBT 1st ed. 2018 edition
Sun
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
176 pages, 171 Illustrations, black and white; XXIV, 176 p. 171 illus.
Media | Books Book |
Released | November 2, 2017 |
ISBN13 | 9789811046117 |
Publishers | Springer Verlag, Singapore |
Pages | 168 |
Dimensions | 244 × 167 × 17 mm · 449 g |
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